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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508A DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage INCH Collector-emitter voltage Emitter-base voltage GE S AN Open emitter Open base EMIC CONDITIONS OND TOR UC VALUE 1200 700 10 8 15 UNIT V V V A A W ae ae Open collector Collector current (DC) Collector current (Pulse) Collector power dissipation TC=25ae 125 150 -65~150 Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508A CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IE=10mA; IC=0 IC=100mA; IB=0 IC=4.5A; IB=2A IC=4.5A; IB=2A VCE=1500V; VBE=0 TC=125a C VEB=5V; IC=0 IC=1A ; VCE=5V 8 MIN 10 700 1.0 1.3 1.0 2.0 0.1 TYP. MAX UNIT V V V V mA mA SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE ts tf fT Storage time Fall time Transition frequency HAN INC SEM GE IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3|I H IC=0.1A ; VCE=5V OND IC TOR UC 7 0.55 7 |I |I s s MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508A SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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